v rrm = 150 v - 200 v i f(av) = 120 a features ? high surge capability twin tower package ? not esd sensitive parameter symbol MBR120150CT(r) unit repetitive peak reverse voltage v rrm 150 v rms reverse voltage v rms 106 v silicon power schottk y diode conditions MBR120150CT thru mbr120200ctr 200 141 mbr120200ct(r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) ? types from 150 v to 200 v v rrm dc blocking voltage v dc 150 v operating temperature t j -55 to 150 c storage temperature t stg -55 to 150 c parameter symbol MBR120150CT(r) unit average forward current (per pkg) i f(av) 120 a maximum forward voltage (per leg) 0.88 1 10 30 thermal characteristics thermal resistance, junction-case (per leg) r jc 0.80 c/w -55 to 150 200 1 mbr120200ct(r) 0.80 t j = 150 c 0.92 ma t j = 25 c i fm = 60 a, t j = 25 c conditions -55 to 150 30 electrical characteristics, at tj = 25 c, unless otherwise specified reverse current at rated dc blocking voltage (per leg) i r v f v a t j = 100 c 10 t c = 125 c 120 peak forward surge current (per leg) i fsm t p = 8.3 ms, half sine 800 800 www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 1
MBR120150CT thru mbr120200ctr www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. MBR120150CT thru mbr120200ctr www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 3
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